Conductor bodies attached adhesive sheet, process for producing semiconductor device and semiconductor device

ABSTRACT

A semiconductor device, which is obtained by sticking a conductor bodies attached adhesive sheet  1  comprising a base material  2,  an adhesive agent layer  3  formed on the base material  2  and conductor bodies  4  buried in the adhesive agent layer  3  to a semiconductor wafer, removing the base material from the adhesive agent layer of the conductor bodies attached adhesive sheet  1,  then, the adhesive agent layer  3  and a substrate are aligned and the semiconductor wafer and the substrates are adhered via the adhesive agent layer  3,  has no defects caused by fluidity of an under filling material.

BACKGROUND OF THE INVENTION

[0001] 1. Field of the Invention

[0002] The present invention relates to a semiconductor device bonded bya so-called flip-chip mounting method, a process for producing the same,and an adhesive sheet to be used for adhering a semiconductor chip or asemiconductor wafer and a substrate to produce the same.

[0003] 2. Description of the Related Art

[0004] In recent years, in terms of a semiconductor integrated circuit(IC) getting more integrated and semiconductor device (IC package)getting more compact, etc., a flip-chip mounting method has come to beapplied. The flip-chip mounting method is a kind of a wireless bondingmethod including the steps of forming bumps made by soldering, etc. onelectrodes on a surface of the semiconductor chip, mounting thesemiconductor chip made to be upside down on a print substrate, ceramicsubstrate or other substrates, aligning the bumps with the electrodes onthe substrate, then, heating to fuse the bumps so that the electrodes ofthe semiconductor chip and the electrodes of the substrate are bonded.

[0005] In a semiconductor device made by the above flip-chip mountingmethod, a resin called an under filling material is generally providedbetween the semiconductor chip and the substrate to prevent crack, etc.caused by a difference of coefficients of linear expansion between thesemiconductor chip, the bumps and the substrate.

[0006] As the under filling material, a liquid epoxy resin compositionobtained by blending an epoxy resin, curing agent and inorganic filleris normally used. The liquid epoxy resin composition is hardened afterbeing injected into a space between the semiconductor chip and thesubstrate.

[0007] In a recent semiconductor chip, however, there are rapidprogresses along with higher integration of a semiconductor integratedcircuit, such as, becoming to have multi-electrodes, narrower pitchesbetween electrodes, and the semiconductor device getting thinner, sospaces between the bumps are becoming extremely narrow and a distancebetween the semiconductor chip and the substrate is becoming extremelyshort. When the spaces between bumps become extremely narrow and thedistance between the semiconductor chip and the substrate becomesextremely short as above, it becomes hard for the under filling materialto get into the space between the semiconductor chip and the substrate(between the bumps) due to a flow resistance. Then, the under fillingmaterial hardens in a state it is not sufficiently spread out in thespace between the semiconductor chip and the substrate, and when therearises a deficiency in the under filling material, credibility of asemiconductor device to be obtained declines.

SUMMARY OF THE INVENTION

[0008] The present invention was made in consideration with the abovecircumstances and has as an object thereof to provide a semiconductordevice free from defects caused by fluidity of an under fillingmaterial, a process for producing the same, and an adhesive sheet to beused for producing the semiconductor device.

[0009] To attain the above object, according to the present invention,there is provided a conductor bodies attached adhesive sheet comprisinga base material, an adhesive agent layer formed on the base material andconductor bodies buried in the adhesive agent layer in an arrangementcorresponding to electrodes of a semiconductor integrated circuit andelectrodes of a substrate, wherein an adhesive agent constituting theadhesive agent layer has gradable adhesiveness (claim 1).

[0010] The adhesive agent layer preferably has a function as a so-calledunder filling material, that is, it is preferable to have a coefficientof linear expansion close to those of the semiconductor wafer orsemiconductor chip, substrate and conductor bodies when finally hardens.

[0011] The adhesive agent which has gradable adhesiveness may have astage of exhibiting tackiness (removable adhesiveness) and a stage ofexhibiting adhesiveness (a so-called tacky adhesive agent), or may bethose which do not exhibit any tackiness/adhesiveness in a normal statebut exhibit gradable tackiness/adhesiveness by a heat, compression orother triggers. Due to the gradable adhesiveness of an adhesive agent ofthe adhesive agent layer, sticking to a semiconductor wafer/chip or asubstrate, remove of a base material, temporary adhesion and actualadhesion of the semiconductor wafer/chip and the substrate can beefficiently performed when producing a semiconductor device.

[0012] When the adhesive agent layer is insulative, it is preferablethat upper ends and/or lower ends of the conductor bodies aresubstantially positioned on the front surface and/or the back surface ofthe adhesive agent layer (claim 2). It is for surely connecting theelectrode of the semiconductor integrated circuit and the electrode ofthe substrate via the conductor bodies. However, it is not limited tothe above when the adhesive agent layer has anisotropic conductivity.Note that even when the above adhesive agent layer is insulative and theconductor bodies is completely buried in the adhesive agent layer, it ispossible to connect an electrode of the semiconductor integrated circuitand an electrode of the substrate via the conductor bodies by a pressingin the thickness direction, etc.

[0013] The above conductor bodies attached adhesive sheet may be made tobe a size corresponding to a semiconductor wafer, and the conductorbodies may be arranged so as to correspond to electrodes of a pluralityof semiconductor integrated circuit formed on the semiconductor wafer(claim 3). According to the conductor bodies attached adhesive sheet, asemiconductor device can be produced in a wafer size, thus, productionof a semiconductor device at a high speed and at a low cost can beattained.

[0014] A first process for producing a semiconductor device according tothe present invention comprises the steps of; sticking a semiconductorchip or a semiconductor wafer and the conductor bodies attached adhesivesheet (claims 1 to 3) so that electrodes of a semiconductor integratedcircuit formed on the semiconductor chip or semiconductor wafer and theconductor bodies of the adhesive sheet can be electrically connected (Itdoes not always have to be connected in this step. It will be samebelow); removing the base material from the adhesive agent layer of theconductor bodies attached adhesive sheet (It naturally includes themeaning of removing the adhesive agent layer from the base material. Itwill be same below); and aligning the adhesive agent layer with asubstrate so that the conductor bodies buried in the adhesive agentlayer and electrodes of the substrate can be electrically connected, andadhering the semiconductor chip or semiconductor wafer and the substrate(claim 4).

[0015] A second process for producing a semiconductor device accordingto the present invention comprises the steps of; sticking a substrateand the conductor bodies attached adhesive sheet (claims 1 to 3) so thatelectrodes of the substrate and the conductor bodies of the adhesivesheet can be electrically connected; removing the base material from theadhesive agent layer of the conductor bodies attached adhesive sheet;and aligning a semiconductor chip or a semiconductor wafer with theadhesive agent layer so that electrodes of a semiconductor integratedcircuit formed on the semiconductor chip or semiconductor wafer and theconductor bodies buried in the adhesive agent layer can be electricallyconnected, and adhering the substrate and the semiconductor chip orsemiconductor wafer (claim 5).

[0016] A third process for producing a semiconductor device according tothe present invention comprises the steps of; sticking a semiconductorwafer and the conductor bodies attached adhesive sheet (claim 3) so thatelectrodes of a semiconductor integrated circuit formed on thesemiconductor wafer and the conductor bodies of the adhesive sheet canbe electrically connected; removing the base material from the adhesiveagent layer of the conductor bodies attached adhesive sheet; aligningthe adhesive agent layer with a substrate so that the conductor bodiesburied in the adhesive agent layer and electrodes of the substrate canbe electrically connected, and adhering the semiconductor wafer and thesubstrate; and cutting a laminate obtained by adhering the semiconductorwafer and the substrate to obtain a semiconductor device (claim 6).

[0017] A fourth process for producing a semiconductor device comprisesthe steps of; sticking a substrate and the conductor bodies attachedadhesive sheet (claim 3) so that electrodes of the substrate and theconductor bodies of the adhesive sheet can be electrically connected;removing the base material from the adhesive agent layer of theconductor bodies attached adhesive sheet; aligning a semiconductor waferwith the adhesive agent layer so that electrodes of semiconductorintegrated circuit formed on the semiconductor wafer and the conductorbodies buried in the adhesive agent layer can be electrically connected,and adhering the substrate and the semiconductor wafer; and cutting alaminate obtained by adhering the substrate and the semiconductor waferto obtain a semiconductor device (claim 7).

[0018] A fifth process for producing a semiconductor device comprisesthe steps of; sticking a semiconductor wafer and the conductor bodiesattached adhesive sheet (claim 3) so that electrodes of a semiconductorintegrated circuit formed on the semiconductor wafer and the conductorbodies of the adhesive sheet can be electrically connected; cutting thesemiconductor wafer together with the adhesive agent layer of theconductor bodies attached adhesive sheet to obtain semiconductor chips;expanding spaces between the semiconductor chips if needed; removing theadhesive agent layer attached semiconductor chip from the base materialof the conductor bodies attached adhesive sheet; and aligning theadhesive agent layer with a substrate so that the conductor bodiesburied in the adhesive agent layer and electrodes of the substrate canbe electrically connected, and adhering the semiconductor chip and thesubstrate (claim 8). The process of widening the space between thesemiconductor chips may be performed also by expanding the base materialor by expanding other sheet (wafer dicing sheet) adhered on the basematerial.

[0019] The process for producing a semiconductor device (claims 4 to 8)may further comprise a step of relatively improving an adhesion force ofthe adhesive agent layer to the semiconductor chip, semiconductor waferor substrate than an adhesion force of the adhesive agent layer to thebase material before the step of removing the base material from theadhesive agent layer of the conductor bodies attached adhesive sheet(claim 9). By performing the step, the base material can be surelyremoved from the adhesive agent layer while making the adhesive agentlayer remained on the semiconductor chip, semiconductor wafer or thesubstrate.

[0020] A first semiconductor device according to the present inventionis produced by the above process (claims 4 to 9) (claim 10). Note thatas far as the obtained semiconductor device is identical orsubstantially identical or equivalent to those produced by the aboveprocess for producing a semiconductor device (claims 4 to 9),semiconductor devices produced by a different process are also includedin the scope of the present invention.

[0021] A second semiconductor device according to the present inventioncomprises a semiconductor chip, a substrate adhered to the semiconductorchip via an adhesive agent layer, and conductor bodies for electricallyconnecting electrodes of a semiconductor integrated circuit formed onthe semiconductor chip and electrodes of the substrate in the adhesiveagent layer, wherein the adhesive agent layer is obtained by hardening alayer of an adhesive agent wherein the conductor bodies are buried(claim 11).

[0022] In the present invention, since a conductor bodies is buried inadvance in an adhesive agent layer, the adhesive agent layer functionsas an under filling material, so a process of injecting an under fillingmaterial to a space between a semiconductor chip and a substrate becomesunnecessary. Accordingly, defects caused by fluidity of the underfilling material can be prevented in the obtained semiconductor device.

BRIEF DESCRIPTION OF THE DRAWINGS

[0023] These and other objects and features of the present inventionwill become clearer from the following description of the preferredembodiments given with reference to the attached drawings, in which:

[0024]FIG. 1 is a schematic cross-sectional view of a conductor bodiesattached adhesive sheet according to an embodiment of the presentinvention;

[0025]FIG. 2 is a schematic plane view of a conductor bodies attachedadhesive sheet according to the same embodiment;

[0026]FIG. 3 is a schematic perspective view of when sticking theconductor bodies attached adhesive sheet according to the sameembodiment and a semiconductor wafer;

[0027]FIG. 4 is a schematic cross-sectional view of a state where theconductor bodies attached adhesive sheet according to the sameembodiment and a semiconductor wafer are stuck;

[0028]FIG. 5 is a schematic cross-sectional view of a state where anadhesive agent layer of the conductor bodies attached adhesive sheetaccording to the same embodiment and a substrate are aligned(furthermore, a state where the semiconductor wafer and the substrateare adhered via the adhesive agent layer);

[0029]FIG. 6 is a schematic perspective view of when adhering aconductor bodies attached adhesive sheet according to another embodimentof the present invention and a semiconductor chip;

[0030]FIG. 7 is a schematic cross-sectional view of a conductor bodiesattached adhesive sheet according to another embodiment of the presentinvention; and

[0031]FIG. 8 is a schematic cross-sectional view of a state where asemiconductor wafer and a substrate are adhered via the adhesive agentlayer of the conductor bodies attached adhesive sheet according to thesame embodiment.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0032] Below, embodiments of the present invention will be explained.

[0033] First Embodiment

[0034]FIG. 1 is a schematic cross-sectional view of a conductor bodiesattached adhesive sheet according to a first embodiment of the presentinvention, FIG. 2 is a schematic plane view of a conductor bodiesattached adhesive sheet according to the same embodiment, FIG. 3 is aschematic perspective view of when sticking the conductor bodiesattached adhesive sheet according to the same embodiment and asemiconductor wafer, FIG. 4 is a schematic cross-sectional view of astate where the conductor bodies attached adhesive sheet according tothe same embodiment and a semiconductor wafer are stuck, and FIG. 5 is aschematic cross-sectional view of a state where an adhesive agent layerof the conductor bodies attached adhesive sheet according to the sameembodiment and a substrate are aligned (furthermore, a state where thesemiconductor wafer and the substrate are adhered).

[0035] Configuration of Conductor Bodies Attached Adhesive Sheet 1

[0036] As shown in FIG. 1 and FIG. 2, a conductor bodies attachedadhesive sheet 1 according to a first embodiment of the presentinvention comprises a base material 2, an adhesive agent layer 3 formedon the base material 2, and a plurality of conductor bodies 4 buried inthe adhesive agent layer 3. The adhesive agent layer 3 has a same shapeas that of a semiconductor wafer 5 shown in FIG. 3, which is a diskshape being formed a cut off portion (orientation flat). Note that thecut off portion may be a notch other than an orientation flat.

[0037] As shown in FIG. 1, an upper end of each of the conductor bodies4 is positioned on a front surface of the adhesive agent layer 3, and anlower end thereof is positioned on a back surface of the adhesive agentlayer 3. The conductor bodies 4 buried in the adhesive agent layer 3 inthe above way are arranged in a pattern corresponding to an arrangementof electrodes of a plurality of semiconductor integrated circuits formedon the semiconductor wafer 5 (FIG. 2).

[0038] Adhesive Agent Layer 3

[0039] The adhesive agent layer 3 is comprised of an adhesive agenthaving gradable adhesiveness. The adhesive agents which exhibit gradableadhesiveness include those having a stage of tackiness (removableadhesiveness) and a stage of adhesiveness (a so-called tacky adhesiveagent) and also include those which do not exhibit anytackiness/adhesiveness in a normal state but exhibit gradabletackiness/adhesiveness by a heat, compression or other triggers.

[0040] The adhesive agent layer 3 preferably has a function as aso-called under filling material, that is, it is preferable to have acoefficient of linear expansion close to those of the semiconductorwafer 5 (or a semiconductor chip), substrate 6 and conductor bodies 4when it finally hardens.

[0041] An adhesive agent (tacky adhesive agent) of the former type maybe, for example, a composition (a) containing a thermosetting resin anda tacky component, while an adhesive agent of the latter type may be,for example, a polyimide type resin (b) and an epoxy type resin (c),etc. The resins or the resin compositions may be used alone, or amaterial wherein the resin or the resin composition is used as a matrixcan be also used. Note that a thickness of the adhesive agent layer 3 isnormally determined in accordance with a height of the conductor bodies4.

[0042] a. Composition Containing Thermosetting Resin and Tacky component

[0043] In a composition containing a thermosetting resin and an tackycomponent, mainly the thermosetting resin exhibits adhesiveness and thetacky component exhibits tackiness. Examples of the thermosetting resinin such a composition include an epoxy resin, a phenol resin, an urearesin, a melanin resin, an unsaturated polyester resin, a resorcinolresin, a furan resin, a polyurethane resin, a silicone resin etc. Anepoxy resin is preferable among them. On the other hand, examples of thetacky component include an acrylic type adhesive, a rubber typeadhesive, a polyester type adhesive, or thermoplastic resins such aspolyolefin, polyvinyl chloride, polystyrene, thermoplastic polyamide andpolyester. A photopolymerizable composition may be included therein. Assuch a tacky component, a (meth)acrylate copolymer is preferable.

[0044] Particularly preferable composition containing a thermoplasticresin and a tacky component is a composition (hereinafter, also referredto as “composition A”) containing a (meth)acrylate copolymer having aweight-average molecular weight of not less than 30000, an epoxy resinhaving a weight-average molecular weight of 100 to 10000, aphotopolymerizable low molecular compound and thermal activation latentepoxy resin curing agent.

[0045] The (meth)acrylate copolymer having a weight-average molecularweight of not less than 30000 may be a copolymer obtained bycopolymerizing monomers, such as, (meth)acrylic acid, for example, alkyl(meth)acrylate derived from (meth)acrylic acid and alcohol having acarbon number of 1 to 14, hydroxyethyl (meth)acrylate, glycidyl(meth)acrylate, etc. A copolymer of (meth)acrylic acid and/or glycidyl(meth)acrylic acid and at least one kind of alkyl (meth)acrylate ispreferable among them.

[0046] Examples of alkyl (meth)acrylate derived from (meth)acrylic acidand alcohol having a carbon number of 1 to 14 include methyl(meth)acrylate, ethyl (meth)acrylate, butyl (meth)acrylate, etc.

[0047] When using a copolymer derived from (meth)acrylic acid and/orglycidyl (meth)acrylic acid as a (meth)acrylate copolymer, a content ofa component unit derived from glycidyl (meth)acrylic acid in thecopolymer is normally made to be 0 to 80 mol %, preferably 5 to 50 mol%, and a content of a component unit derived from (meth)acrylic acid isnormally made to be 0 to 40 mol %, preferably 5 to 20 mol %. In thiscase, as monomer components other than (meth)acrylic acid and glycidyl(meth)acrylic acid constituting (meth)acrylate copolymer, it ispreferable to use alkyl (meth)acrylate, such as, methyl (meth)acrylate,ethyl (meth)acrylate, butyl (meth)acrylate, etc.

[0048] An epoxy resin having a weight-average molecular weight of 100 to10000 may be glycidyl ether of a phenol series, such as, bisphenol A,bisphenol F, resorcinol, phenyl novolac, cresol novolac; glycidyl etherof an alcohol series, such as, butanediol, polyethylene glycol,polypropylene glycol; glycidyl ether of carboxylic acid, such as,phthalic acid, isophthalic acid, tetrahydro phthalic acid; a glycidyltype or alkyl glycidyl type epoxy resin obtained by substituting activehydrogen bonded with nitrogen atom, such as aniline isocyanurate, with aglycidyl group; and so-called alicycle epoxide wherein an epoxy group isintroduced by, for example, oxidizing carbon-carbon double bond inmolecular, such as, vinyl cyclohexene epoxide, 3,4-epoxy cyclohexylmethyl-3,4-dicyclohexane carboxylate, 2-(3,4-epoxy) cyclohexyl-5,5-spiro(3,4-epoxy) cyclohexane-m-dioxane, etc.

[0049] An epoxy equivalent weight of the above epoxy resins ispreferably 50 to 5000 g/eq. The above epoxy resins may be used alone orby combining different kinds. Among these epoxy resins, bisphenol seriesglycidyl type epoxy resin, o-cresol novolac type epoxy resin and phenolnovolac type epoxy resin are preferably used.

[0050] The above epoxy resins are used in an amount of a range ofnormally 5 to 2000 parts by weight, preferably 100 to 1000 parts byweight with respect to 100 parts by weight of (meth)acrylate copolymer.

[0051] A photopolymerizable low molecular compound is a compound able tobe crosslinked by being irradiated an energy rays, such as, ultravioletrays, electron rays, etc. As such a compound, oligomer wherein there isat least one photopolymerizable double bond in molecular and aweight-average molecular weight (Mw) is in a range of 100 to 30000,preferably 300 to 10000 may be used.

[0052] Example of a photopolymerizable low molecular compound may beurethane modified acrylate, epoxy modified acrylate, polyester acrylate,polyether acrylate; (meth)acrylic acid oligomer, itaconic acid oligomerand other oligomers having a functional group, such as hydroxy group orcarboxyl group. Epoxy modified acrylate and urethane modified acrylateare preferably used among these.

[0053] Note that different points between the above photopolymerizablelow molecular compound and the above (meth)acrylate copolymer or anepoxy resin are that an upper limit of a weight-average molecular weightof the photopolymerizable low molecular compound is 30000 while that ofthe above (meth)acrylate copolymer is not less than 30000, and that thephotopolymerizable low molecular compound always has at least onephotopolymerizable double bond in its molecular while the above(meth)acrylate copolymer and epoxy resin normally do not havephotopolymerizable double bond.

[0054] The above photopolymerizable low molecular compound is used in anamount of a range of normally 10 to 1000 parts by weight, preferably 50to 600 parts by weight with respect to 100 parts by weight of(meth)acrylate copolymer.

[0055] When using ultraviolet rays for crosslinking the abovephotopolymerizable low molecular compound, it is preferable that aphotopolymerizing initiator is blended in the composition A. Aphotopolymerizing initiator may be benzophenone, acetophenone, benzoin,benzoin alkyl ether, benzil, benzil dimethyl ketal, etc. Thesephotopolymerizing initiators maybe used alone or by combining differentkinds. It is preferable to use α-substituted acetophenone among these.

[0056] The above photopolymerizing initiator is used in an amount of arange of normally 0.1 to 10 parts by weight, preferably 1 to 5 parts byweight with respect to 100 parts by weight of a photopolymerizable lowmolecular compound.

[0057] A thermal activation latent epoxy resin curing agent is a curingagent of a type that does not react with epoxy resins at a roomtemperature but activates by a heat of a certain temperature or more andreacts with epoxy resins. As kinds (divided by activation processes) ofthermal activation latent epoxy resin curing agents, there are thosewhich generate active species (anion, cation) by a chemical reaction dueto heating, those which are stably dispersed in an epoxy resin around aroom temperature but become compatible and dissolved in an epoxy resinat a high temperature to start a curing reaction, those which are a typeof curing agent contained in molecular sieves which is released at ahigh temperature to start a curing reaction, and those encapsulated in amicro-capsule, etc. These thermal activation latent epoxy resin curingagents can be used alone or by combining different kinds, and amongthese, it is preferable to use dicyanamide, imidazole compound, or amixture of the dicyanamide and imidazole compound.

[0058] The above thermal activation latent epoxy resin curing agents areused in an amount of a range of normally 0.1 to 40 parts by weight,preferably 1 to 30 parts by weight with respect to 100 parts by weightof an epoxy resin.

[0059] Note that a thermo-curing agent, such as polyisocyanate compound,other than the above thermal activation latent epoxy resin curing agentsmay be blended so as to change an adhesion ability of the compound A.The thermo-curing agent is used in an amount of a range of normally 0.1to 30 parts by weight, preferably 5 to 20 parts by weight with respectto 100 parts by weight of (meth)acrylate copolymer.

[0060] b. Polyimide Type Resin

[0061] Examples of a polyimide type resin include a polyimide resin, apolyisoimide resin, maleimide resin, a bismaleimide resin, apolyamide-imide resin, a polyetherimide resin, apoly-imide-isoindoloquinazolinedioneimide resin, etc. These polyimidetype resins may be used alone or by combining different kinds. It ispreferable to use a polyimide resin among these. Furthermore, inpolyimide resins, there are thermoplastic polyimide resins which do nothave a reactive functional group and thermosetting polyimide resinswhich show an imidation reaction by heating. Any of these may be used orthe both may be mixed to be used.

[0062] A weight-average molecular weight of polyimide type resins ispreferably about 10,000 to 1,000,000, particularly about 50,000 to100,000.

[0063] c. Epoxy Type resin

[0064] As an epoxy type resin, those similar to the epoxy resins of theabove composition A may be used. The weight-average molecular weight ispreferably about 100 to 100,000.

[0065] The above resins or resin compositions may be blended additives,such as, a leuco dye, an antistatic agent, a coupling agent, an ionscavenger and a copper inhibitor, and other polymers, oligomers and lowmolecular compounds, etc.

[0066] As a leuco dye, 3-[N-(P-tolylamino)-7-anilinofluoran,4,4′,4″-trisdimethylamino triphenylmethane, etc. may be used, and as anantistatic agent, carbon black, anion type and cation typesurface-active agents, etc. may be used.

[0067] Also, other polymers, oligomers and low molecular compounds maybe, for example, a variety of polymers or oligomers, such as, an epoxyresin, an amide resin, an urethane resin, an amide acid resin, asilicone resin, an acrylic resin and acrylic rubber; andnitrogen-contained organic compounds, such as, triethanolamine,α,ω-(bis3-aminopropyl) polyethylene glycol ether.

[0068] Incidentally, to provide a function of an under filling materialto the adhesive agent layer 3, those which have the above linearexpansion coefficient when finally hardened may be selected as anadhesive agent constituting the adhesive agent layer 3, and it is alsopossible to make a material have the above linear expansion coefficientwhen it is finally hardened by adding an inorganic filler, etc. to theadhesive agent as a matrix.

[0069] An inorganic filler may be a fused silica, crystal silica,almina, boron nitride, aluminum nitride, silicon nitride, magnesia,magnesium silicate, etc., and ones being spherical are preferable. Ablending amount and particle diameter of an inorganic filler withrespect to a matrix may be suitably adjusted and selected so that theadhesive agent layer 3 has a desired linear expansion coefficient and isnot restrained in terms of fluidity as in an under filling agent of therelated art.

[0070] Note that when filling up the above composition A with a lightscattering inorganic filler, such as silica powder and almina powder, aphotopolymerizable low molecular compound in the composition A can beefficiently polymerized by irradiating a light.

[0071] Base Material 2

[0072] Any material would be basically sufficient as a base material 2in the present embodiment as far as it supports the adhesive agent layer3 and is able to be removed from the adhesive agent layer 3, and it mayalso have stiffness.

[0073] Examples of the base material 2 include films made by resins,such as, polyethylene, polypropylene, polybutene, polybutadiene, vinylchloride, ionomer, ethylene-methacrylic acid copolymer, polyethyleneterephthalate, polyethylene naphthalate, polybutylene terephthalate,polyimide, polyetherimide, polyaramide, polyetherketone, polyether etherketone, polyphenylene sulfide, poly (4-methylpentene-1),polytetrafluoroethylene, and those obtained by crosslinking theseresins. These films may be used alone or by laminating different kinds.A film thickness thereof is normally about 10 to 300 μm, preferably 20to 150 μm.

[0074] Also, other than the above films, papers, such as, a glassinepaper, clay coated paper, resin coated paper, a laminated paper(polyethylene laminated paper, polypropylene laminated paper, etc.) ornonwoven fabrics, metallic foils, etc. may be used.

[0075] A surface tension of a surface of the base material 2 on whichthe adhesive agent layer 3 is formed is preferably not more than 40dyn/cm. Release treating may be performed on the surface of the basematerial 2 on which the adhesive agent layer 3 is formed to adjust thesurface tension to be a preferable value. Alkyd resin type, siliconeresin type, fluorine resin type, unsaturated polyester resin type,polyolefin resin type and wax type releasing agents, etc. may be usedfor the release treating. Note that when the base material 2 itself hasthe above surface tension, the base material 2 can be used as it iswithout any release treating.

[0076] When using the above composition A for the adhesive agent layer3, it is preferable to use as the base material 2 a material wherein anenergy rays to be irradiated on the composition A can permeate, and itis particularly preferable to use a material having a low adhesivenessto the composition A having improved tackiness due to the energy raysirradiation.

[0077] On the other hand, when a polyimide type resin or an epoxy typeresin is used for the adhesive agent layer 3, it is preferable to use asthe base material 2 a film made of a heat resistance resin. A fusingpoint of the heat resistance resin is preferably not less than 230° C.,more preferably 250 to 300° C., and particularly preferably 260 to 280°C.

[0078] When producing a semiconductor device by using the presentconductor bodies adhesive sheet 1, dicing of a semiconductor wafer canbe also performed. In this case, spaces between semiconductor chips maybe made wider by expanding the base material 2 after dicing. As the basematerial 2 able to be expanded in this way, it is preferable to select aresin film having a extensible property in the length and widthdirections and a Young's modulus of 1.0×10⁴ kg/cm² or less.

[0079] Conductor bodies 4

[0080] The conductor bodies 4 are not particularly limited as far as itis normally used as bumps (electrodes) in a semiconductor device. As amaterial of the conductor bodies 4, metals or alloys of solder, Au, Cu,Ni, Ag, Pt, etc., resins plated by these metals or alloys, resinswherein conductive powder is dispersed, conductive resins, etc. isnormally selected. In the present embodiment, a shape of the conductorbodies 4 is sphere, but it is not limited to this and may have acolumnar shape, prismatic shape or conical shape, etc. The conductorbodies 4 may be such a shape from the beginning or may be made to be thespheric shape or other shape by being printed a conductive paste.

[0081] A height of the conductor bodies 4 is normally 50 to 300 μm, butit may be less than 50 μm, or furthermore, 30 μm or less. In the presentembodiment, the height of the conductor bodies 4 is the same as thethickness of the adhesive agent layer 3.

[0082] Note that a pattern of the conductor bodies 4 in the presentembodiment is a pattern corresponding to a so-called area typesemiconductor chip on which electrodes are formed all over the chip, butthe present invention is not limited to this pattern. It may be apattern corresponding to a so-called peripheral type semiconductor chipwherein electrodes are formed around the chip.

[0083] Production of Conductor Bodies Attached Adhesive Sheet 1

[0084] A process for producing the above a conductor bodies attachedadhesive sheet 1 is not particularly limited, but generally, afterprinting conductor bodies 4 by a predetermined pattern on the basematerial 2, an adhesive agent is coated to form the adhesive agent layer3 on the base material 2. As a printing method of the conductor bodies4, screen printing or a process for injecting the conductor bodies 4 byan ink-jet method, etc. are applied. On the other hand, as a method ofcoating the adhesive agent, screen process printing, roll coating, knifecoating and micro-die methods, etc. are applied.

[0085] Note that when preparing and coating the above adhesive agent, asolvent wherein respective components of the adhesive agent can beuniformly dissolved and dispersed can be also used. The solvent is notparticularly limited as far as it is capable of uniformly dissolving anddispersing the respective components therein. Examples of the solventinclude dimethylformamide, dimethylacetoamide, N-methyl-pyrrolidone,dimethyl sulfoxide, diethylene glycol dimethyl ether, toluene, benzene,xylene, methyl ethyl ketone, tetrahydrofuran, ethyl-cellosolve, dioxane,cyclopentanone, cyclohexanone, monoglyme, etc. These solvents can beused alone or by being mixed with different kinds.

[0086] On the other hand, the above conductor bodies attached adhesivesheet 1 may be produced by forming the adhesive agent layer 3 by coatingan adhesive agent on the base material 2, then burying the conductorbodies 4 in the adhesive agent layer 3 in a predetermined pattern. As amethod of burying the conductor bodies 4, a method of pressing oneobtained by forming the conductor bodies 4 on a sheet or adsorbing theconductor bodies 4 on a jig in a predetermined pattern and one obtainedby forming the adhesive agent layer 3 on a sheet so as to bury theconductor bodies 4 in the adhesive agent layer 3, a method of processinjecting the conductor bodies 4 to the adhesive agent layer 3 by anink-jet method, etc. may be applied.

[0087] In any of the above methods, the conductor bodies 4 may be buriedin the adhesive agent. In this case, the upper end and the lower end ofthe conductor bodies 4 may be positioned on the front surface and backsurface of the adhesive agent layer 3 by pressing at the time ofadhering a protective film.

[0088] Note that a plurality of adhesive agent layers 3 may be formed bybeing set beside each other on one base material 2.

[0089] Producing Semiconductor device

[0090] A process for producing a semiconductor device by using the aboveconductor bodies attached adhesive sheet 1 will be explained.

[0091] First, as shown in FIG. 3, a semiconductor wafer 5 is put on theadhesive agent layer 3 of the conductor bodies attached adhesive sheet 1and the two are stuck to each other. At this time, as shown in FIG. 4,the semiconductor wafer 5 is aligned so that an electrodes 51 of asemiconductor integrated circuit formed on the semiconductor wafer 5 andthe conductor bodies 4 can be electrically connected, and thesemiconductor wafer 5 and the adhesive agent layer 3 of the conductorbodies attached adhesive sheet 1 are stuck to each other.

[0092] Note that in the conductor bodies attached adhesive sheet 1 ofthe present embodiment, since the upper end of the conductor bodies 4 ispositioned at the surface of the adhesive agent layer 3, the electrodes51 of the semiconductor wafer 5 and the conductor bodies 4 can beelectrically connected by sticking the aligned semiconductor wafer 5 tothe adhesive agent layer 3. Incidentally, the electrodes 51 of thesemiconductor wafer 5 may be those called bonding pads or conductorbodies pads, and may be barrier metal formed thereon, furthermore,pillars.

[0093] When the adhesive agent layer 3 of the conductor bodies attachedadhesive sheet 1 has tackiness, the above sticking can be attained by anadhesion force of the tackiness. When the adhesive agent layer 3 doesnot have any tackiness, it is preferable to stick the adhesive agentlayer 3 and the semiconductor wafer 5 by hot pressing. The heatingtemperature of the hot pressing is preferably about 30 to 300° C.,particularly preferably about 50 to 200° C., the heating time ispreferably about 1 second to 10 minutes, particularly preferably about 1to 30 seconds, and the pressure is preferably about 1 to 10 kg/cm²,particularly preferably about 1 to 5 kg/cm².

[0094] After sticking the semiconductor wafer 5 and the conductor bodiesattached adhesive sheet 1, dicing of the semiconductor wafer 5 may beperformed if needed. At this time, dicing may be performed byadditionally preparing a wafer dicing sheet, removing the base material2 from the conductor bodies attached adhesive sheet 1 and sticking thewafer dicing sheet to the adhesive agent layer 3 of the conductor bodiesattached adhesive sheet 1, or by without using a wafer dicing sheet assuch.

[0095] After the above dicing, spaces between semiconductor chips may bemade wide by expanding in accordance with need. When the wafer dicingsheet is used, the wafer dicing sheet can be expanded, and even whensuch a wafer dicing sheet is not used, if a base material 2 able to beexpanded is used, the base material 2 may be expanded.

[0096] Incidentally, when using the above composition A for the adhesiveagent layer 3 of the conductor bodies attached adhesive sheet 1, it ispreferable to irradiate an energy rays from the base material 2 side ofthe conductor bodies attached adhesive sheet 1 to the adhesive agentlayer 3. As the energy rays, ultraviolet rays having a center wavelengthof about 365 nm and electron rays, etc. may be used.

[0097] When using ultraviolet rays as the energy rays, normally, theilluminance is set in a range of 20 to 500 mW/cm² and the irradiationtime is set in a range of 0.1 to 150 seconds. Also, for example whenusing electron rays, conditions can be set conforming to the case ofultraviolet rays. Note that heating may be also auxiliary performed atthe time of irradiating the above energy rays.

[0098] By irradiating energy rays as such, an adhesion force between thesemiconductor wafer 5 (or a semiconductor chip) and the adhesive agentlayer 3 is normally improved to 50 to 4000 g/25 mm, preferably 100 to3000 g/25 mm. On the other hand, an adhesion force between the adhesiveagent layer 3 and the base material 2 normally declines to 1 to 500 g/25mm, preferably 100 g/25 mm or less.

[0099] Then, the base material 2 is removed from the above adhesiveagent layer 3 of the conductor bodies attached adhesive sheet 1.Incidentally, when using the above composition A for the adhesive agentlayer 3 of the conductor bodies attached adhesive sheet 1 and theirradiation of an energy rays is performed as above, the base material 2can be surely removed while leaving the adhesive agent layer 3 fixed onthe semiconductor wafer 5 (or a semiconductor chip) side. Note that theirradiation of the energy rays may be performed before a dicing process.

[0100] As shown in FIG. 5, alignment (superimposition) of thesemiconductor wafer 5 (or a semiconductor chip) with a substrate 6 isperformed so that electrodes 61 formed on the substrate 6 and conductorbodies 4 are electrically connected.

[0101] Note that since a lower end of the conductor bodies 4 ispositioned on the back surface of the adhesive agent layer 3 in theconductor bodies attached adhesive sheet 1 of the present embodiment,the conductor bodies 4 and the electrodes 61 of the substrate 6 can beelectrically connected by the aligning of the semiconductor wafer 5 (ora semiconductor chip).

[0102] The semiconductor wafer 5 (or a semiconductor chip) and thesubstrate 6 are adhered via the adhesive agent layer 3. The adhesionprocess can be generally performed by heating. The heating is preferablyperformed during superimposing the substrate 6 and the semiconductorwafer 5 (or a semiconductor chip) or immediately after thesuperimposition. At this time, when the adhesive agent layer 3 does nothave any tackiness, a temporary adhesion is preferably performed beforean actual adhesion.

[0103] A heating temperature of the temporary adhesion is normally 100to 300° C., preferably 150 to 250° C., a heating time is normally 1second to 10 minutes, preferably 1 to 30 seconds, while a heatingtemperature of the actual adhesion is normally 100 to 300° C.,preferably 150 to 250° C. and a heating time is normally 1 to 120minutes, preferably 1 to 60 minutes. By heating in this way, an adhesiveagent of the adhesive agent layer 3 is fused or hardened so that thesemiconductor wafer 5 (or a semiconductor chip) and the substrate 6 arefirmly adhered.

[0104] During the above heating, the semiconductor wafer 5 (or asemiconductor chip) and the substrate 6 may be pressed to adhere byapplying a suitable pressure in the thickness direction of a laminateformed by the semiconductor wafer 5 (or a semiconductor chip), theadhesive agent layer 3, and the substrate 6. As a result of thepressing, electrodes 51 of the semiconductor wafer 5 (or a semiconductorchip) and the conductor bodies 4 can be surely connected and theconductor bodies 4 and the electrodes 61 of the substrate 6 can besurely connected. The pressing is particularly efficient in the casewhere an upper end and/or lower end of the conductor bodies 4 is notappeared on the surface of the insulative adhesive agent layer 3 in theconductor bodies attached adhesive sheet 1.

[0105] Incidentally, when a fusing point of the conductor bodies 4 islower than the above heating temperature, for example when the conductorbodies 4 are made of solder balls or a resin, the conductor bodies 4 arefused or soften to deform in some cases.

[0106] When the semiconductor wafer 5 is not cut yet, the resultobtained by adhering the semiconductor wafer 5 and the substrate 6 maybe cut and chipped to be a semiconductor device 7, or those in a wafersize may be used as semiconductor devices 7 without cutting. Cutting canbe performed by a dicing saw and other normal cutting means. Thus cutresults become so-called real chip size package type semiconductordevices.

[0107] In the process for producing a semiconductor device as explainedabove, a conductor bodies attached adhesive sheet 1 was stuck to asemiconductor wafer 5 and then a substrate 6 was adhered thereto, butthe present invention is not limited to this. The conductor bodiesattached adhesive sheet 1 may be adhere to the substrate 6 and then thesemiconductor wafer 5 is adhered thereto.

[0108] In the semiconductor device 7 obtained as above, since theconductor bodies 4 are buried in the adhesive agent layer 3 in advanceand the adhesive agent layer 3 serves as an under filling material, aprocess of injecting an under filling material to a space between thesemiconductor wafer 5 (or a semiconductor chip) and the substrate 6becomes unnecessary. Accordingly, any defects caused by fluidity of anunder filling material does not exist in thus obtained semiconductordevice 7.

[0109] [Second Embodiment]

[0110] A conductor bodies attached adhesive sheet according to a secondembodiment of the present invention will be explained. FIG. 6 is aschematic perspective view of when sticking the conductor bodiesattached adhesive sheet according to the second embodiment of thepresent invention and a semiconductor chip.

[0111] As shown in FIG. 6, a conductor bodies attached adhesive sheet 1Aaccording to the second embodiment comprises, as same as the conductorbodies attached adhesive sheet 1 according to the first embodiment, abase material 2A, an adhesive agent layer 3A formed on the base material2A, and a plurality of conductor bodies 4A buried in the adhesive agentlayer 3A, but differs from the conductor bodies attached adhesive sheet1 according to the first embodiment in the point that the adhesive agentlayer 3A is formed to be a same shape as that of a semiconductor chip52. Note that the conductor bodies 4A buried in the adhesive agent layer3A are arranged in a pattern corresponding to an arrangement ofelectrodes of a semiconductor integrated circuit formed on thesemiconductor chip 52.

[0112] The conductor bodies attached adhesive sheet 1A according to thesecond embodiment can be produced in a similar process to in theconductor bodies attached adhesive sheet 1 according to the firstembodiment, and a plurality of adhesive agent layers 3 may be formed bybeing set beside each other on one base material 2A.

[0113] Also, in the case of producing a semiconductor device by usingthe conductor bodies attached adhesive sheet 1A according to the secondembodiment, a semiconductor device can be produced in a similar processto in the conductor bodies attached adhesive sheet 1 according to thefirst embodiment except that a dicing process and a process of cutting aresult obtained by adhering the semiconductor wafer and the substrateare unnecessary.

[0114] [Third Embodiment]

[0115] A conductor bodies attached adhesive sheet according to a thirdembodiment of the present invention will be explained. FIG. 7 is aschematic sectional view of the conductor bodies attached adhesive sheetaccording to the third embodiment and FIG. 8 is a schematic sectionalview of a state where a semiconductor wafer and a substrate are adheredvia an adhesive agent layer of the conductor bodies attached adhesivesheet according to the third embodiment.

[0116] As shown in FIG. 7, a conductor bodies attached adhesive sheet 1Baccording to the third embodiment of the present invention comprises abase material 2B, an adhesive agent layer 3B formed on the base material2B and a plurality of conductor bodies 4B buried in the adhesive agentlayer 3B. An upper end of each of the plurality of conductor bodies 4Bin the present embodiment is positioned lower than a surface of theadhesive agent layer 3B (actually buried in the adhesive agent layer 3B)and a lower end of each of the conductor bodies 4B is positioned on aback surface of the adhesive agent layer 3B. However, the presentinvention is not limited to this and the lower ends of the conductorbodies may positioned upper than the back surface of the adhesive agentlayer 3B and the upper ends thereof may be positioned on the surface ofthe adhesive agent layer 3B. Alternately, the conductor bodies 4B may becompletely buried in the adhesive agent layer 3B.

[0117] The adhesive agent layer 3B in the present embodiment hasanisotropic conductivity, that is, it exhibits conductivity in thethickness direction when being pressed in the thickness direction, buthas an insulation property in the surface direction. For that property,conductive particles 31B are dispersed in an insulative matrix in theadhesive agent layer 3B.

[0118] As such conductive particles 31B, particles made of a metalhaving an excellent conductivity, such as Ni, Ag, Au, Cu, solder, etc.,polymer particles covered with the metals, or these metal particles ormetal covered particles on which an extremely thin organic insulationlayer is formed so as to improve the insulation property in the surfacedirection may be used.

[0119] To secure the anisotropic conductivity, an average particlediameter of the conductive particles 31B is preferably 1 to 100 μm, anda dispersion amount of the conductive particles 31B is preferably 1 to30 vol % with respect to the matrix.

[0120] The conductor bodies attached adhesive sheet 1B according to thethird embodiment can be produced in a similar process to in theconductor bodies attached adhesive sheet 1 according to the firstembodiment. Also, when producing a semiconductor device by using theconductor or bodies attached adhesive sheet 1B according to the thirdembodiment, it can be produced in a similar process to in the conductorbodies attached adhesive sheet 1 according to the first embodimentexcept for applying a suitable pressure in the thickness direction ofthe semiconductor wafer 5 (or a semiconductor chip) and the adhesiveagent layer 3B and letting conductivity appear in the thicknessdirection of the adhesive agent layer 3B.

[0121] In a semiconductor device 7B produced by using the conductorbodies attached adhesive sheet 1B according to the third embodiment, asshown in FIG. 8, electrodes 51 of the semiconductor wafer 5 (or asemiconductor chip) and electrodes 61 of the base material 6 areelectrically connected via the conductor bodies 4B and conductiveparticles 31B.

[0122] [Other embodiment]

[0123] The embodiments explained above are described for easierunderstanding of the present invention and not to limit the presentinvention. Accordingly, elements disclosed in the above embodimentsinclude all design modifications and equivalents belonging to the scopeof the present invention.

[0124] For example, the base materials 2, 2A and 2B may have the sameshape as that of the adhesive agent layers 3, 3A and 3B.

[0125] As explained above, according to the present invention, asemiconductor having no defects caused by fluidity of an under fillingmaterial can be obtained. Namely, the present invention is useful inproducing a semiconductor device having no defects caused by fluidity ofan under filling material.

EXAMPLES

[0126] Below, the present invention will be explained further in detailby examples, but the scope of the present invention is not limited tothe examples.

Example 1

[0127] Production of Solder Ball Attached Adhesive Sheet (adhesiveagent: composition A)

[0128] A copolymer having an weight average molecular weight of 900,000was prepared by copolymerizing 55 parts by weight of butyl acrylate, 10parts by weight of methylmethacrylate, 20 parts by weight of glycidylmethacrylate and 15 parts by weight of 2-hydroxyethyl acrylate.

[0129] A composition A was obtained by mixing10 parts by weight of theabove copolymer, 24 parts by weight of liquid bisphenol A type epoxyresin (Epikote 828 produced by Yuka Shell Epoxy Co.,Ltd), 10 parts byweight of o-cresol novolac type epoxy resin (EOCN-104S produced byNIPPON KAYAKU Co.,Ltd.), 0.05 part by weight ofγ-glycidoxypropyltrimethoxysilane as a coupling agent, 1.5 part byweight of dicyandiamide as a thermal activation latent curing agent, 1.5part by weight of 2-phenyl-4,5-hydroxymethylimidazole, 5 parts by weightof urethane acrylate type oligomer (Seikabeam 14-29B produced byDainichiseika Color & Chemicals Mfg.Co.,Ltd.) as a photopolymerizablelow molecular compound, 0.2 part by weight of 1-hydroxycyclohexyl phenylketone as a photopolymerization initiator and 1 part by weight ofaromatic polyisocyanate (Colonate L produced by Nippon PolyurethaneIndustry Co.,Ltd.) as a crosslinking agent.

[0130] Spheric conductor bodies having a diameter of 200 μm were formedin the same arrangement of electrodes of a semiconductor integratedcircuit by using as a release film a polyethylene terephthalate (PET)film having a thickness of 38 μm, one surface of which was releasingtreated by a silicone resin, and by printing a conductive paste(DW-250H-5 produced by TOYOBO Co.,Ltd.) on the releasing treated surfaceof the release film by screen printing. After that, the abovecomposition A was coated by screen printing and dried at 100° C. for 5minutes to form an adhesive agent layer, a polyethylene film (thickness:100 μm, surface tension: 36 dyn/cm) was stuck as a base material on thesurface of the adhesive agent layer, and a conductor bodies attachedadhesive sheet wherein a thickness of an adhesive agent layer was 200 μmwas obtained. The conductor bodies attached adhesive sheet was made tobe a wafer form by punching. Also, a conductor bodies attached adhesivesheet of a chip size was prepared separately in a similar way.

Example 2

[0131] Production of Conductor bodies Attached Adhesive Sheet (adhesiveagent: polyimide type resin)

[0132] Spheric conductor bodies having a diameter of 200 μm were formedin the same arrangement of electrodes of a semiconductor integratedcircuit by using as a base material polyethylene naphthalate (PEN) film(thickness: 25 μm, surface tension: 34 dyn/cm), one surface of which wasreleasing treated by a silicon resin, and by printing a conductive paste(DW-250H-5 produced by TOYOBO Co.,Ltd.) on the releasing treated surfaceof the base material by screen printing. After that, a tetrahydrofuransolution (solid content: 20 wt %) of thermoplastic polyimide (UpititeUPA-N221 produced by Ube Industries Ltd.) was coated to be a wafer shapeby screen printing, dried at 90° C. for 5 minutes to form an adhesiveagent layer having a thickness of 200 μm. Thus, a conductor bodiesattached adhesive sheet was obtained.

Example 3

[0133] Production of Conductor bodies Attached Adhesive Sheet (adhesiveagent: epoxy type resin composition)

[0134] An epoxy type resin adhesive agent was prepared by mixing 40parts by weight of a high molecular bisphenol type epoxy resin (Epikote1010 produced by Yuka Shell Epoxy Co.,Ltd), 20 parts by weight of amultifunctional cresol novolac type epoxy resin (EOCN-4600 produced byNippon Kayaku Co.,Ltd.), 1.5 parts by weight of2-phenyl-4,5-hydroxymethylimidazole as a thermal activation latentcuring agent, and 0.1 part by weight of γ-glycidepropyltrimethoxysilane.

[0135] A PET film (thickness: 38 μm, surface tension: 34 dyn/cm), ofwhich one surface was releasing treated by a silicone resin was used asa base material, the above epoxy type resin adhesive agent was coated tobe a wafer shape by screen printing on the releasing treated surface ofthe base material to form an adhesive agent layer. On the other hand,suction was performed from a back surface of a jig having holes in thesame arrangement as that of electrodes of a semiconductor integratedcircuit so as to adsorb solder balls (Pb-63Sn) having a diameter of 200μm as conductor bodies into respective holes to be made aligned. Bystopping the suction after pressing the jig against the above adhesiveagent layer, the conductor bodies were buried in the adhesive agentlayer. Then, the adhesion agent layer was dried at 100° C. for 5 minutesso that a conductor bodies attached adhesion sheet wherein a thicknessof the adhesive agent layer was 200 μm was obtained.

Example 4

[0136] Production of Conductor bodies Attached Adhesive Sheet (adhesiveagent: anisotropic conductive adhesive agent)

[0137] 10 parts by weight of conductive particles (silver particles,average diameter: 3 μm) were mixed and dispersed to a hundred parts byweight of thermosetting resin which is obtained by mixing a hundredparts by weight of bisphenol A type epoxy resin (RE-310S produced byNippon Kayaku Co.,Ltd.), 20 parts by weight of a first curing agent(Cureduct P-0505 produced by Shikoku Chemicals Corp.) and 10 parts byweight of second curing agent (Cureduct L-01B produced by ShikokuChemicals Corp.) as an imidazole series adduct type latent curing agentto prepare an anisotropic conductive adhesive agent.

[0138] A conductor bodies attached adhesive sheet was prepared in asimilar way to in the example 3 except that the above anisotropicconductive adhesive agent was used as an adhesive agent.

Example 5

[0139] Production of Semiconductor device (adhesive sheet: example 1)

[0140] A conductor bodies attached adhesive sheet in a wafer shapeprepared in the example 1 (wherein an adhesive agent layer was exposedby removing a PET film as a release film. The following will be thesame.) and a semiconductor wafer were aligned so that the conductorbodies of the conductor bodies attached adhesive sheet were electricallyconnected to electrodes of a semiconductor integrated circuit formed onthe semiconductor wafer, and the conductor bodies attached adhesivesheet was stuck to the semiconductor wafer. They were fixed to a ringframe.

[0141] After irradiating ultraviolet rays (ADWILL PAD-2000m/8 producedby Lintec Corporation was used. irradiation conditions: luminance was340 mW/cm², irradiation time was 6 seconds. The following will be in thesame way) to the above adhesive agent layer, full-cut dicing wasperformed up to the adhesive agent layer by using a dicing saw(AWD-4000B produced by Tokyo Seimitsu Co.,Ltd.) and thus obtainedadhesive agent layer attached chip was picked up. After that, conductorbodies of the adhesive agent layer and electrodes of the substrate werealigned. The chip and substrate were temporarily adhered by heating at150° C. by 5 kg/cm² for 5 seconds, then, furthermore heated at 160° C.for 60 minutes to firmly adhere the chip and substrate via the aboveadhesive agent layer so as to obtain a semiconductor device.

Example 6

[0142] Production of Semiconductor device (adhesive sheet: example 2)

[0143] A conductor bodies attached adhesive sheet prepared in theexample 2 and a semiconductor wafer were aligned so that conductorbodies of the conductor bodies attached adhesive sheet was electricallyconnected to electrodes of semiconductor integrated circuit formed onthe semiconductor wafer. The two were hot-pressed at 180° C. by 5 kg/cm²for 30 seconds, then, the above conductor bodies attached adhesive sheetwas cut along a semiconductor wafer shape.

[0144] The PEN film as a base material of the above conductor bodiesattached adhesive sheet was removed from the adhesive agent layer, thena separately prepared wafer dicing sheet (ADWILL G-11 produced by LintecCorporation) was stuck to the adhesive agent layer, and the adhesiveagent layer attached semiconductor wafer was fixed on a ring frame.

[0145] Full-cut dicing was performed up to the above adhesive agentlayer by using a dicing saw (AWD-4000B produced by Tokyo SeimitsuCo.,Ltd.), the thus obtained adhesive agent layer attached chip waspicked up, then, the conductor bodies of the adhesive agent layer andthe electrodes on the substrate were aligned.

[0146] After temporarily adhering the chip and the substrate at 180° C.by 5 kg/cm² for 10 seconds, they were furthermore heated at 200° C. for60 minutes to firmly adhere the chip and the substrate via the aboveadhesive agent layer so as to obtain a semiconductor device.

Example 7

[0147] Production of Semiconductor device (adhesive sheet: example 3)

[0148] The conductor bodies attached adhesive sheet prepared in theexample 3 and a semiconductor wafer were aligned so that the conductorbodies of the conductor bodies attached adhesive sheet were electricallyconnected to electrodes of a semiconductor integrated circuit formed onthe semiconductor wafer. The two were hot-pressed at 140° C. by 5 kg/cm²for 30 seconds, then the above conductor bodies attached adhesive sheetwas cut along a semiconductor wafer shape.

[0149] The PET film as a base material of the above conductor bodiesattached adhesive sheet was removed from the adhesive agent layer, thena separately prepared wafer dicing sheet (ADWILL G-11 produced by LintecCorporation) was stuck to the adhesive agent layer, and the adhesiveagent layer attached semiconductor wafer was fixed on a ring frame.

[0150] Full-cut dicing was performed in a similar way to in the example6 and thus obtained adhesive agent layer attached chip was picked up.After that, the conductor bodies of the adhesive agent layer and theelectrodes on the substrate were aligned, the chip and the substratewere temporarily adhered by heating at 180° C. by 5 kg/cm² for 5seconds, then furthermore heated at 180° C. for 60 minutes to firmlyadhere the chip and the substrate via the above adhesive agent layer soas to obtain a semiconductor device.

Example 8

[0151] Production of Semiconductor device (adhesive sheet: example 4)

[0152] The conductor bodies attached adhesive sheet prepared in theexample 4 and a semiconductor wafer were aligned so that the conductorbodies of the conductor bodies attached adhesive sheet were electricallyconnected to electrodes of a semiconductor integrated circuit formed onthe semiconductor wafer. After the two were hot-pressed at 150° C. by 5kg/cm² for 30 seconds, the above conductor bodies attached adhesivesheet was cut along the semiconductor wafer shape.

[0153] After that, an adhesive agent layer attached chip was obtained ina similar way to in the example 7. The conductor bodies of the adhesiveagent layer and the electrodes on the substrates were aligned. The chipand the substrate were temporarily adhered by heating at 150° C. by 5kg/cm² for 5 seconds, then furthermore heated at 180° C. for 60 minutesto firmly adhere the chip and the substrate via the above adhesive agentlayer so as to obtain a semiconductor device.

Example 9

[0154] Production of Semiconductor device (adhesive sheet: example 1)

[0155] The conductor bodies attached adhesive sheet in a wafer shapeprepared in the example 1 and a semiconductor wafer were aligned so thatthe conductor bodies of the conductor bodies attached adhesive sheetwere electrically connected to the electrodes of a semiconductorintegrated circuit formed on the semiconductor wafer, and a conductorbodies attached adhesive sheet was stuck to the semiconductor wafer.

[0156] After irradiating ultraviolet rays to the adhesive agent layer ofthe above conductor bodies attached adhesive sheet, a polyethylene filmas a base material was removed from the adhesive agent layer and theconductor bodies of the adhesive agent layer and the electrodes on thesubstrate were aligned. After temporarily adhering the semiconductorwafer and the substrate by heating at 150° C. by 5 kg/cm² for 5 seconds,they were furthermore heated at 160° C. for 60 minutes to firmly adherethe semiconductor wafer and the substrate via the above adhesive agentlayer.

[0157] A separately prepared ultraviolet ray curing type wafer dicingsheet (ADWILL D-510T produced by Lintec Corporation) was stuck to theabove substrate, and the substrate attached semiconductor wafer wasfixed to the ring frame. Then full-cut dicing was performed in a similarway to in the example 6. After ultraviolet rays were irradiated to theabove ultraviolet ray curing type wafer dicing sheet, thus obtainedsubstrate attached chip was picked up so as to obtain a semiconductordevice.

Example 10

[0158] Production of Semiconductor device (adhesive sheet: example 1)

[0159] The conductor bodies attached adhesive sheet in a wafer shapeprepared in the example 1 and a substrate were aligned so that theconductor bodies of the conductor bodies attached adhesive sheet wereelectrically connected to electrodes on the substrate, and the conductorbodies attached adhesive sheet was stuck to the substrate.

[0160] After irradiating ultraviolet rays to the adhesive agent layer ofthe above conductor bodies attached adhesive sheet, a polyethylene filmas a base material was removed from the adhesive agent layer, and theconductor bodies of the adhesive agent layer and the electrodes of thesemiconductor integrated circuit formed on the semiconductor wafer werealigned. After temporarily adhering the substrate and the semiconductorwafer by heating at 150° C. by 5 kg/cm² for 5 seconds, they werefurthermore heated at 160° C. for 60 minutes to firmly adhere thesubstrate and the semiconductor wafer via the above adhesive agentlayer.

[0161] A separately prepared ultraviolet ray curing type wafer dicingsheet (ADWILL D-510T produced by Lintec Co.,Ltd.) was stuck to the abovesubstrate, and the substrate attached semiconductor wafer was fixed onthe ring frame. Then full-cut dicing is performed in a similar way to inthe example 6. After ultraviolet rays were irradiated to the aboveultraviolet ray curing type wafer dicing sheet, thus obtained substrateattached chip is picked up so as to obtain a semiconductor device.

Example 11

[0162] Production of Semiconductor device (adhesive sheet: example 1)

[0163] The conductor bodies attached adhesive sheet in a wafer shapeproduced in the example 1 and a substrate were aligned so that theconductor bodies of the conductor bodies attached adhesive sheet wereelectrically connected to the electrodes on the substrate. The conductorbodies attached adhesive sheet was stuck to the substrate, and the twowere fixed on the ring frame.

[0164] Full-cut dicing was performed on the adhesive agent layerattached substrate in a similar way to in the example 5. Afterultraviolet rays were irradiated to the adhesive agent layer, apolyethylene film as a base material of the conductor bodies attachedadhesive sheet was expanded, and an obtained adhesive agent attachedsubstrate was picked up. After that, conductor bodies of the adhesiveagent layer and electrodes of a separately diced semiconductor chip werealigned. The substrate and the semiconductor chip were temporarilyadhered at 150° C. by 5 kg/cm²for 5 seconds, then furthermore heated at160° C. for 60 minutes to firmly adhere the substrate and thesemiconductor chip via the above adhesive agent layer.

Example 12

[0165] Production of Semiconductor device (adhesive sheet: example 1)

[0166] The conductor bodies attached adhesive sheet of a chip sizeprepared in the example 1 and a separately diced semiconductor chip werealigned so that the conductor bodies of the conductor bodies attachedadhesive sheet were electrically connected to electrodes of thesemiconductor chip, and the conductor bodies attached adhesive sheet wasstuck to the semiconductor chip.

[0167] After irradiating ultraviolet rays to an adhesive agent layer ofthe above conductor bodies attached adhesive sheet, a polyethylene filmas a base material was removed from the adhesive agent layer, and theconductor bodies in the adhesive agent layer and the electrodes on thesubstrates were aligned. The semiconductor chip and the substrate weretemporarily adhered at 150° C. by 5 kg/cm² for 5 seconds, then,furthermore heated at 160° C. for 60 minutes to firmly adhere thesemiconductor chip and the substrate via the above adhesive agent layer.

Example 13

[0168] Production of Semiconductor device (adhesive sheet: example 1)

[0169] The conductor bodies attached adhesive sheet of a chip sizeprepared in the example 1 and a substrate were aligned so that theconductor bodies of the conductor bodies attached adhesive sheet wereelectrically connected to electrodes on the substrate, and the conductorbodies attached adhesive sheet was stuck to the substrate.

[0170] After irradiating ultraviolet rays to the adhesive agent layer ofthe above conductor bodies attached adhesive sheet, a polyethylene filmas a base material was removed from the adhesive agent layer, and theconductor bodies of the adhesive agent layer and electrodes of aseparately diced semiconductor chip were aligned. The substrate and thesemiconductor chip were temporarily adhered by heating at 150° C. by 5kg/cm² for 5 seconds, then, furthermore heated at 160° C. for 60 minutesto firmly adhere the substrate and the semiconductor chip via the aboveadhesive agent layer.

Test Example

[0171] A Pressure Cooker Test was conducted on the semiconductor devicesobtained in the examples 5 to 13 under conditions of 121° C., 100 % RH,2 atmospheres and 168 hours. AS a result, no cracks and the likeoccurred in any of the semiconductor devices.

What is claimed is:
 1. A conductor bodies attached adhesive sheet,comprising a base material, an adhesive agent layer formed on said basematerial and conductor bodies buried in said adhesive agent layer in anarrangement corresponding to electrodes of a semiconductor integratedcircuit and electrodes of a substrate, wherein an adhesive agentconstituting said adhesive agent layer has gradable adhesiveness.
 2. Theconductor bodies attached adhesive sheet as set forth in claim 1,wherein upper ends and/or lower ends of said conductor bodies aresubstantially positioned on a front surface and/or a back surface ofsaid adhesive agent layer.
 3. The conductor bodies attached adhesivesheet as set forth in claim 1, wherein said conductor bodies attachedadhesive sheet is made to be a size corresponding to a semiconductorwafer, and said conductor bodies are arranged so as to correspond toelectrodes of a plurality of semiconductor integrated circuit formed onsaid semiconductor wafer.
 4. A process for producing a semiconductordevice, comprising the steps of; sticking a semiconductor chip or asemiconductor wafer and said conductor bodies attached adhesive sheet asset forth in any of claims 1 so that electrodes of a semiconductorintegrated circuit formed on said semiconductor chip or semiconductorwafer and the conductor bodies of said adhesive sheet can beelectrically connected; removing the base material from the adhesiveagent layer of said conductor bodies attached adhesive sheet; andaligning said adhesive agent layer with a substrate so that theconductor bodies buried in said adhesive agent layer and electrodes ofsaid substrate can be electrically connected, and adhering saidsemiconductor chip or semiconductor wafer and said substrate.
 5. Aprocess for producing a semiconductor device, comprising the steps of;sticking a substrate and said conductor bodies attached adhesive sheetas set forth in any one of claims 1 so that electrodes of said substrateand the conductor bodies of said adhesive sheet can be electricallyconnected; removing the base material from the adhesive agent layer ofsaid conductor bodies attached adhesive sheet; and aligning asemiconductor chip or a semiconductor wafer with said adhesive agentlayer so that electrodes of a semiconductor integrated circuit formed onsaid semiconductor chip or semiconductor wafer and the conductor bodiesburied in said adhesive agent layer can be electrically connected, andadhering said substrate and said semiconductor chip or semiconductorwafer.
 6. A process for producing a semiconductor device, comprising thesteps of; sticking a semiconductor wafer and said conductor bodiesattached adhesive sheet as set forth in claim 3 so that electrodes of asemiconductor integrated circuit formed on said semiconductor wafer andthe conductor bodies of said adhesive sheet can be electricallyconnected; removing the base material from the adhesive agent layer ofsaid conductor bodies attached adhesive sheet; aligning said adhesiveagent layer with a substrate so that the conductor bodies buried in saidadhesive agent layer and electrodes of said substrate can beelectrically connected, and adhering said semiconductor wafer and saidsubstrate; and cutting a laminate obtained by adhering saidsemiconductor wafer and said substrate to obtain a semiconductor device.7. A process for producing a semiconductor device, comprising the stepsof; sticking a substrate and said conductor bodies attached adhesivesheet as set forth in claim 3 so that electrodes of said substrate andthe conductor bodies of said adhesive sheet can be electricallyconnected; removing the base material from the adhesive agent layer ofsaid conductor bodies attached adhesive sheet; aligning a semiconductorwafer with the adhesive agent layer so that electrodes of semiconductorintegrated circuit formed on said semiconductor wafer and the conductorbodies buried in said adhesive agent layer can be electricallyconnected, and adhering said substrate and said semiconductor wafer; andcutting a laminate obtained by adhering said substrate and saidsemiconductor wafer to obtain a semiconductor device.
 8. A process forproducing a semiconductor device, comprising the steps of; sticking asemiconductor wafer and said conductor bodies attached adhesive sheet asset forth in claim 3 so that electrodes of a semiconductor integratedcircuit formed on said semiconductor wafer and the conductor bodies ofsaid adhesive sheet can be electrically connected; cutting saidsemiconductor wafer together with the adhesive agent layer of saidconductor bodies attached adhesive sheet to obtain semiconductor chips;expanding spaces between said semiconductor chips if needed; removingthe adhesive agent layer attached semiconductor chip from the basematerial of said conductor bodies attached adhesive sheet; and aligningsaid adhesive agent layer with a substrate so that the conductor bodiesburied in said adhesive agent layer and electrodes of said substrate canbe electrically connected, and adhering said semiconductor chip and saidsubstrate.
 9. The process for producing a semiconductor device as setforth in any one of claims 4 to 8, further comprising a step ofrelatively improving an adhesion force of said adhesive agent layer tosaid semiconductor chip, semiconductor wafer or substrate than anadhesion force of said adhesive agent layer to said base material beforethe step of removing the base material from the adhesive agent layer ofsaid conductor bodies attached adhesive sheet.
 10. A semiconductordevice produced by said process as set forth in any one of claims 4 to8.
 11. A semiconductor device, comprising a semiconductor chip, asubstrate adhered to said semiconductor chip via an adhesive agentlayer, and conductor bodies for electrically connecting electrodes of asemiconductor integrated circuit formed on said semiconductor chip andelectrodes of said substrate in said adhesive agent layer, wherein saidadhesive agent layer is obtained by hardening a layer of an adhesiveagent wherein said conductor bodies are buried.